▎ 摘　　要

NOVELTY - Preparation of wafer-level graphene single crystal involves placing plasma-processed metal foil in a reaction furnace for 1-30 minutes under power of 100-150 W, pressure of 400-500 Pa and air, hydrogen, argon, oxygen or nitrogen atmosphere, placing in inert atmosphere, heating, introducing hydrogen into the reaction furnace, annealing, introducing carbon source into the reaction furnace, adjusting annealing temperature to the growth temperature of the graphene single crystal, starting growth of the graphene single crystal and cooling to room temperature. The metal foil is copper foil, nickel foil, molybdenum foil and/or cobalt foil. USE - The method is useful for preparation of wafer-level graphene single crystal (claimed). ADVANTAGE - The method enables preparation of wafer-level graphene single crystal with high quality.