▎ 摘　　要

NOVELTY - The method involves providing a silicon substrate (1) with N-type doping. A silicon dioxide insulating layer (2) is grown on the surface of silicon substrate. A portion of silicon dioxide insulating layer on the surface of the substrate is etched through a photolithography method. An interface passivation layer (4) is grown on the surface of substrate. A graphene layer (3) having a metal nanostructure (5) modification is transferred on the substrate. A metal electrode is vapor-deposited in a region where the silicon dioxide layer is not etched on the lower and upper surfaces of substrate. USE - Method for manufacturing of enhanced graphene silicon heterojunction photodetection chip. ADVANTAGE - The use of different spectral resonance characteristics of metal nanoparticles of different materials and sizes can improve the specific spectral enhancement properties of the probe chip. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an enhanced graphene silicon heterojunction photodetection chip. DESCRIPTION OF DRAWING(S) - The drawing shows the sectional view of the enhanced graphene silicon heterojunction photodetection chip. Silicon substrate (1) Silicon dioxide insulating layer (2) Graphene layer (3) Interface passivation layer (4) Metal nanostructure (5)