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  • 专利标题:   Bidirectional doping method of graphene involves doping graphene using dopant, transferring graphene on self-assembled monolayer, and forming self-assembled monolayer on base material.
  • 专利号:   KR1351001-B1, WO2014021640-A1
  • 发明人:   HONG B H, KIM Y, PARK J
  • 专利权人:   SNU R DB FOUND, GRAPHENE SQUARE INC, UNIV SEOUL NAT R DB FOUND
  • 国际专利分类:   C01B031/02, C23C002/04, H01L031/042
  • 专利详细信息:   KR1351001-B1 16 Jan 2014 C01B-031/02 201410 Pages: 17
  • 申请详细信息:   KR1351001-B1 KR084905 02 Aug 2012
  • 优先权号:   KR084905

▎ 摘　　要

NOVELTY - Bidirectional doping method of graphene involves doping graphene using dopant, transferring graphene on self-assembled monolayer, and forming self-assembled monolayer on base material. USE - Bidirectional doping method of graphene used for electrode for device e.g. organic light-emitting diode and solar cell (all claimed). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for doped graphene.