▎ 摘　　要

NOVELTY - The composite channel transistor has an interlayer dielectric layer (102) on a semiconductor substrate (101). A gate (103) is in the interlayer dielectric layer. A gate dielectric layer (104) is set on the gate. A composite channel layer (105) is set on the gate dielectric layer and the interlayer dielectric layer. Source and drain regions (107) are located on both ends of the composite channel layer. A passivation layer (106) on the interlayer dielectric layer, covers the periphery and the upper surface of the composite channel layer. A source-drain electrode (108) is located in the passivation layer. The source-drain electrode is connected to the source and drain regions. The composite channel layer is a laminate comprised of layer of graphene and organic film. USE - Composite channel transistor. ADVANTAGE - The graphene with high mobility and organic film with adjustable band gap are selected to form a composite channel layer, which can effectively solve the problem that graphene has no band gap and low mobility of organic thin film transistor. The composite channel transistor is compatible with the existing complementary metal oxide semiconductor (CMOS) process, and the fabrication process is simple and feasible, and a small-sized, large-scale composite channel transistor array can be conveniently prepared. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of composite channel transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of the composite channel transistor. Semiconductor substrate (101) Interlayer dielectric layer (102) Gate (103) Gate dielectric layer (104) Composite channel layer (105) Passivation layer (106) Source and drain region (107) Source-drain electrode (108)