▎ 摘　　要

NOVELTY - Preparing graphene material comprises (a) placing a metal complex as a catalyst template into a chemical vapor deposition reaction chamber and then heating and reacting in a thermostat at 25-100 degrees C for 0-60 minutes, introducing carbon, hydrogen and protective gas and then reacting at gas flow rate of 1-1000 sccm for 0.1 second to 60 minutes and cooling at cooling rate of 1-1000 degrees C/min, and (b) placing the product into an UV lamp at diameter of 1-1000 nm and then mixing with titanium oxide having a thickness of 1-1000 nm and irradiating by photo-etching technology. USE - The method is useful for preparing graphene material, which is useful in FET (claimed). ADVANTAGE - The method is capable of simply preparing graphene material in an economical manner with excellent electrical conductivity.