▎ 摘　　要

NOVELTY - A gallium nitride based photoelectric detector preparing method involves magnetron sputtering an aluminum nitride film on a sapphire substrate to obtain a sputtered aluminum nitride sapphire substrate, growing a single layer of graphene on a copper substrate by chemical vapor deposition, placing a single-layer graphene-containing copper substrate in a ammonium persulfate solution for 12-24 hours to remove copper substrate, transferring single-layer graphene from which copper substrate removed onto sapphire substrate, sputtering aluminum nitride to obtain a sapphire substrate covering the graphene, placing sapphire substrate covering the graphene in metal-organic chemical vapor deposition reaction chamber and forming titanium/gold metal electrode by electron beam evaporation to obtain the finished product. USE - Method for preparing gallium nitride based photoelectric detector. ADVANTAGE - The method enables preparing gallium nitride based photoelectric detector with improved quality. DETAILED DESCRIPTION - A gallium nitride based photoelectric detector preparing method involves magnetron sputtering an aluminum nitride film on a sapphire substrate to obtain a sputtered aluminum nitride sapphire substrate, growing a single layer of graphene on a copper substrate by chemical vapor deposition, placing a single-layer graphene-containing copper substrate in a ammonium persulfate solution for 12-24 hours to remove copper substrate, transferring single-layer graphene from which copper substrate removed onto sapphire substrate, sputtering aluminum nitride to obtain a sapphire substrate covering the graphene, placing sapphire substrate covering the graphene in metal-organic chemical vapor deposition reaction chamber, introducing a mixed gas of hydrogen and ammonia into the reaction chamber for 5-10 minutes and heating reaction chamber to 600- 650 degrees C for 10-20 minutes to obtain a heat treated sapphire substrate, sequentially introducing hydrogen, ammonia and aluminum sources and growing pulsed aluminum nitride transition layer on sapphire substrate to obtain an aluminum nitride substrate, passing hydrogen, ammonia and gallium sources in turn, using a metal organic chemical vapor deposition method on the pulsed aluminum nitride substrate and growing a p-type gallium nitride epitaxial layer to obtain a gallium nitride substrate, cleaning gallium nitride substrate and lithographically patterning window on the cleaned substrate to obtain a gallium nitride substrate lithographically exits window pattern, forming titanium/gold metal electrode by electron beam evaporation to obtain the finished product.