▎ 摘　　要

NOVELTY - The method involves forming a graphene layer (12) on a substrate (11). The gallium seed is formed on the graphene layer. The gallium nitride buffer layer (13) is formed on the gallium seed of graphene layer in specific lower temperature range. The gallium nitride crystalline layer (14) is formed on the gallium nitride buffer layer in specific higher temperature range, using ammonia. USE - Method of growing gallium nitride crystalline layer on graphene layer of light emitting device (claimed). ADVANTAGE - The damage of the graphene layer due to high temperature is minimized by growing gallium nitride buffer layer on the graphene layer at low temperature. The graphene layer and the substrate can be easily separated, and the gallium nitride crystalline layer can be easily moved to other substrate. The current injection of the light emitting device is improved by the excellent conductivity of the graphene. The quality of the gallium nitride crystalline layer can be improved, and the luminous efficiency of the light emitting device is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a light emitting device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the light emitting device including gallium nitride crystalline layer grown on the graphene layer. Substrate (11) Graphene layer (12) Gallium nitride buffer layer (13) Gallium nitride crystalline layer (14)