▎ 摘　　要

NOVELTY - The method comprises providing a graphene layer (12) on a substrate (11), forming a metal layer (13) on the graphene layer, and chemically depositing a nanomaterial (14) on the graphene layer on which the metal layer is formed to form the hybrid nanostructure. The step of forming of the graphene layer comprises growing the graphene layer placed on a catalyst layer via chemical deposition, removing the catalyst layer from the graphene layer, and transferring the graphene layer to the substrate. A thickness of the metal layer is 0.5-5 nm. USE - The method is useful for forming a hybrid nanostructure on graphene, where the hybrid nanostructure is useful in composite nanostructure that is useful in a nanoelectronic device such as a current nanogenerator (all claimed) and a piezoelectric element, and graphene such as graphene sheet is useful in nanoscale devices. ADVANTAGE - ADVNTAGE - The method is capable of efficiently forming the hybrid nanostructure on the graphene with high electronic, optical, chemical and mechanical characteristics such as quantum electron transport properties, electrical conductivity, optical transparency, chemical stability and mechanical durability. DETAILED DESCRIPTION - The method comprises providing a graphene layer (12) on a substrate (11), forming a metal layer (13) on the graphene layer, and chemically depositing a nanomaterial (14) on the graphene layer on which the metal layer is formed to form the hybrid nanostructure. The step of forming of the graphene layer comprises growing the graphene layer placed on a catalyst layer via chemical deposition, removing the catalyst layer from the graphene layer, and transferring the graphene layer to the substrate. A thickness of the metal layer is 0.5-5 nm. The nanomaterial is chemically deposited for 30 minutes to 2 hours at 800-950 degrees C. The thickness of the formed metal layer is effective to selectively grow a nanowall (16) or a nanowire. The nanomaterial is a Group IV semiconductor, a Group III-V semiconductor, a Group II-VI semiconductor, a Group IV-VI semiconductor, a Group IV-V-VI semiconductor, an oxide semiconductor, a nitride semiconductor, and/or a metal. The hybrid nanostructure comprises a nanowall (16), a combination of the nanowall and nanowire, and/or a nanowire in the stated order from the graphene layer. A structure of the metal layer is converted to an island structure when the nanomaterial is chemically deposited. INDEPENDENT CLAIMS are included for: (1) a composite nanostructure; (2) a nanoelectronic device; and (3) a hybrid nanostructure. DESCRIPTION OF DRAWING(S) - The figure shows schematic view of a process of forming a hybrid nanostructure. Substrate (11) Graphene layer (12) Metal layer (13) Nanomaterial (14) Nanowall. (16)