▎ 摘　　要

NOVELTY - The method involves forming and processing a metal layer on a base plate to obtain a grid line and a grid electrode during composition process. A gate insulating layer is formed between the gate line and the gate electrode. A graphene-containing layer is arranged on the gate insulating layer. An upper part of the gate electrode is formed with a graphene semiconductor active layer. A semiconductor layer is connected with a thin film transistor (TFT) channel. A pixel electrode is provided with a common electrode. A common electrode layer is made of indium tin oxide or graphite material. USE - Method for manufacturing a TFT array substrate in a display device (claimed). ADVANTAGE - The method enables improving advanced design system (ADS) mode of a TFT array base plate structure to simplify process flow. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a display device. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a TFT array substrate.