▎ 摘　　要

NOVELTY - The transistor has an overlapped layer arranged on a semiconductor lining substrate and constituted by graphene and an insulating medium overlapped with each other. A grid electrode is formed by coating parts of the overlapped layer. An insulating layer is arranged between the grid electrode and the overlapped layer. A source electrode and a leakage electrode are arranged on two sides of the grid electrode. The leakage electrode is in contact with the semiconductor lining substrate. The source electrode is in contact with an uppermost graphene layer of the overlapped layer. USE - Transistor i.e. FET. ADVANTAGE - The transistor is small in size. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a transistor.