▎ 摘　　要

NOVELTY - The graphene transistor has multiple layers of graphene (12) that are controlled by 0.2 to 1 % of defect density of the portion made as a channel region of a transistor, and is formed on an insulating film (11). A gate structure portion is formed by laminating the insulating film and the metal electrode on the channel region of the graphene. The gate structure portions are formed mutually parallel on the graphene between the metal catalyst layers, and are provided with laminated structures of insulating film and metal electrode. USE - Graphene transistor. ADVANTAGE - The improvement of the through-put for manufacturing large-scale-integrated-circuit can be achieved. The increase of ON state current can be made. The control of the electric current value by the field effect can be enabled. Since the graphene is made into the suspending structure, the higher charge mobility is anticipated. The damage of graphene can be prevented. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of the graphene transistor. DESCRIPTION OF DRAWING(S) - The drawing shows the explanatory views of the graphene transistor. Insulating film (11) Graphene (12) Source electrode (13) Drain electrode (14) Gate electrode (17)