• 专利标题:   Method of fabricating graphene nano device, involves placing first metal mask pattern prepared in advance on first adhesive layer and heating layer to attach first metal mask pattern on substrate.
  • 专利号:   US2015214305-A1, KR2015089512-A, US9129882-B2
  • 发明人:   JEON E K, KANG H S, LIM K, PARK H J, KIM K, KIM J E, KIM Y S, HEO Y S, LIM K S, KIM K S
  • 专利权人:   ELECTRONICS TELECOM RES INST, ELECTRONICS TELECOM RES INST
  • 国际专利分类:   H01L021/283, H01L021/306, H01L021/308, H01L029/16, H01L021/027, H01L021/28, H01L021/44
  • 专利详细信息:   US2015214305-A1 30 Jul 2015 H01L-029/16 201551 Pages: 15 English
  • 申请详细信息:   US2015214305-A1 US500764 29 Sep 2014
  • 优先权号:   KR010209

▎ 摘  要

NOVELTY - The method involves forming (S20) first metal mask pattern on a substrate on which a graphene layer is formed. A graphene pattern is formed (S10) by performing (S30) an etching process on the graphene layer using the first metal mask pattern as an etching mask. The formation of the first metal mask pattern involves forming a first adhesive layer on the graphene layer. The first metal mask pattern prepared in advance is placed on the first adhesive layer. The first adhesive layer is heated to attach the first metal mask pattern on the substrate. USE - Method for fabricating graphene nano device. ADVANTAGE - A graphene nano device having improved electrical properties is provided. The contamination of the surface of the graphene pattern is decreased and thus more accurate micro graphene pattern is formed, by performing a patterning process using a membrane mask pattern formed by using a nitride layer. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a method of fabricating a graphene nano device. Step for forming graphene layer on substrate (S10) Step for forming metal mask pattern on the substrate (S20) Step for performing etching process (S30) Step for forming membrane mask pattern on substrate (S40) Step for performing etching process (S50)