• 专利标题:   Method for manufacturing electronic device with graphene layer, involves transferring synthesized graphene layer on surface-treated base substrate, where base substrate is heat-treated, and transferred graphene layer is patterned.
  • 专利号:   KR2015057141-A, KR1982157-B1
  • 发明人:   KWON Y D, KIM K S
  • 专利权人:   SAMSUNG TECHWIN CO LTD, HANWHA AEROSPACE CO LTD
  • 国际专利分类:   G06F003/041, H01B013/00
  • 专利详细信息:   KR2015057141-A 28 May 2015 H01B-013/00 201541 Pages: 8
  • 申请详细信息:   KR2015057141-A KR140093 18 Nov 2013
  • 优先权号:   KR140093

▎ 摘  要

NOVELTY - The method involves transferring (S20) a synthesized graphene layer on a surface-treated base substrate, where the base substrate is processed (S10) under a Propane gas mood. The graphene layer is processed with a plasma, where the base substrate is heat-treated. The graphene layer ids made of polyethylene terephthalate, where the transferred graphene layer is patterned (S30). USE - Method for manufacturing an electronic device with a graphene layer. ADVANTAGE - The synthesized graphene layer is transferred on a surface-treated base substrate, where the base substrate is heat-treated, and hence enables lowering the surface resistance of a graphene layer in an effective manner and transfers the exfoliation generation modulus between the graphene layer and the base substrate in an easy manner. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of an electronic device manufacturing method. (Drawing includes non-English language text). Processing a base substrate under a Propane gas mood process with a plasma (S10) Transferring a synthesized graphene layer on a surface-treated base substrate (S20) Patterning a transferred graphene layer (S30)