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  • 专利标题:   Preparation of reduced-graphene oxide used for e.g. high-speed semiconductor, involves exposing graphene oxide to reducing agent, and irradiating light to exposed graphene oxide for reducing graphene oxide.
  • 专利号:   WO2016175498-A1, KR2016127984-A, KR1733861-B1
  • 发明人:   LEE Y, CHO M S, LEE S H, JUNG Y J, SANG H L, YOO J J
  • 专利权人:   UNIV SUNGKYUNKWAN RES BUSINESS FOUND, UNIV SUNGKYUNKWAN RES BUSINESS FOUND
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   WO2016175498-A1 03 Nov 2016 C01B-031/04 201677 Pages: 16
  • 申请详细信息:   WO2016175498-A1 WOKR004129 20 Apr 2016
  • 优先权号:   KR059615

▎ 摘　　要

NOVELTY - Preparation of reduced-graphene oxide involves exposing (S110) graphene oxide to a reducing agent, and irradiating (S120) light to the exposed graphene oxide for reducing graphene oxide. USE - Preparation of reduced-graphene oxide used for high-speed semiconductor, transparent electrode, high-efficiency solar cell and supercapacitor. ADVANTAGE - The method enables easy and economical preparation of reduced-graphene oxide in short time, without consumption of energy. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart explaining the preparation of reduced-graphene oxide. (Drawing includes non-English language text) Start (AA) End (BB) Exposure process (S110) Irradiation process (S120) Removal of reducing agent (S130)