• 专利标题:   Method for utilizing UV oxidation for implementing and regulating graphene film pattern, involves regulating shape to be etched on graphene film graphic structure for regulating pattern by adjusting strength and direction of magnetic field.
  • 专利号:   WO2018010330-A1, CN107611020-A
  • 发明人:   TAO H, CHEN X, WU Y, SU S, YUE H, LI H
  • 专利权人:   UNIV SHANGHAI JIAOTONG
  • 国际专利分类:   H01L021/02, H01L021/027
  • 专利详细信息:   WO2018010330-A1 18 Jan 2018 H01L-021/02 201810 Pages: 18 Chinese
  • 申请详细信息:   WO2018010330-A1 WOCN102338 18 Oct 2016
  • 优先权号:   CN10546722

▎ 摘  要

NOVELTY - The method involves controlling oxygen excitons to move in direction of magnetic field (4) toward a graphene film for enhancing directionality of etching the graphene film in perpendicular direction and increasing quality of a graphene film microstructure pattern. Directionality of movement of the oxygen excitons is controlled and shape to be etched on a graphene film graphic structure is regulated for regulating the graphene film microstructure pattern by adjusting strength and the direction of the magnetic field. USE - Method for utilizing UV oxidation for implementing and regulating a graphene film pattern. ADVANTAGE - The method enables implementing and regulating a micrometer graphic structure array for large-area graphene film patterning, thus providing high quality to the patterned graphene film. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a structure for utilizing UV oxidation for implementing and regulating a graphene film pattern. Lamp excimer discharge tube (2) Magnetic field generating device (3) Magnetic field (4) Ozone molecule (5) Graphene film hard mask (6)