• 专利标题:   Electrochemical etching method for removing metal substrate layer from graphene layer, involves connecting graphene layer or metal substrate layer to power source to supply current to etch metal substrate layer from graphene layer.
  • 专利号:   US2014076738-A1, US9062389-B2
  • 发明人:   HAN S, GUO L, LI X
  • 专利权人:   INT BUSINESS MACHINES CORP
  • 国际专利分类:   C25F003/02, B32B038/10, C01B031/04, C25F005/00, C25F007/00
  • 专利详细信息:   US2014076738-A1 20 Mar 2014 C25F-003/02 201423 Pages: 10 English
  • 申请详细信息:   US2014076738-A1 US618564 14 Sep 2012
  • 优先权号:   US617727, US618564

▎ 摘  要

NOVELTY - The method involves forming (200) an anode having a graphene layer on a metal substrate layer. The metal substrate layer is formed (202) in an electrolyte. The cathode being electrically connected to a power source is mounted (204) in the electrolyte. One of the graphene layer and the metal substrate layer is connected (206) to the power source to supply a current through the anode and the electrolyte, such that the metal substrate layer is etched (208) from the graphene layer. The metal substrate layer is formed of copper. USE - Electrochemical etching method for removing metal substrate layer from graphene layer, used in electronic device and semiconductor application. ADVANTAGE - Since the metal substrate layer can be etched from the graphene layer and dissolved in the electrolyte solution without being transferred to a cathode, the graphene layer is transferred to another desired substrate without relying on a chemical etchant to dissolve the metal substrate layer. Since the current output from the power supply is kept low such that the current density does not reach a level that damages the graphene layer, the low current throughput can cause a residual amount of metal substrate layer to remain on the graphene layer. Hence the occurrence of the damage to the geaphene layer is prevented. Since the first end of the wire is connected to the metal plate, the current flows through the surface of the graphene layer and the metal substrate layer, and the significantly higher current can be delivered through metal substrate layer without damaging the graphene layer. Hence the overall etching time can be reduced and the large scale productions of graphene can be achieved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for forming an anode. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a method etching a metal substrate layer from a graphene layer. Step for forming anode having graphene layer (200) Step for mounting metal substrate layer in electrolyte (202) Step for mounting cathode being electrically connected to power source (204) Step for connecting graphene layer and metal substrate layer to power source (206) Etching metal substrate layer from graphene layer (208)