▎ 摘　　要

NOVELTY - The transistor has a substrate, a magnetic film layer formed on the substrate, a directional heating layer formed on the magnetic film layer, and microwave antennas formed on the magnetic film layer and on two sides of the directional heating layer. The heat flow is applied to the directional heating layer and in the vertical direction of the spin wave transmission path, so that the regulation and control of the spin wave phase shift function. The spin wave amplification function and the spin wave turn-off function of the spin wave transistor are realized. A spin-wave phase shift function is achieved when a heat flow with a temperature gradient greater than 0 and less than 0.0184K/μm is applied on the directional heating layer. The magnetic thin film layer is a magnetic insulator thin film, a ferromagnetic alloy thin film or an antiferromagnetic thin film. USE - Multifunctional self-rotating wave transistor for spin wave device. ADVANTAGE - The transistor applies heat flow with certain size in the vertical direction of the spin wave transmission path through the directional heating layer, realizes the regulation and control of the spin wave phase shift function, realizes the integration of the spin wave device function and greatly accelerates the commercialization process of the spin wave ultra-low power consumption integrated circuit. The multifunctional spin wave transistor realizes the spin wave regulation in the full wavelength range and realizes low-loss regulation of spin waves because the yttrium iron garnet has extremely low loss and the single-layer graphene hardly has influence on spin wave transmission. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing multifunctional self-rotating wave transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a top view and a side view of a multifunctional self-rotating wave transistor. (Drawing includes non-English language text)