▎ 摘　　要

NOVELTY - The method involves providing (S1) a sacrificial substrate. A graphene layer is formed (S2) on the surface of the sacrificial substrate. A medium layer is formed (S3) on the surface of the graphene layer. A supporting substrate is provided (S4) and the bonded structure obtained on the upper surface of the support substrate. The dielectric layer is in contact with upper surface of the support substrate contact. The sacrificial substrate is removed (S5) by oxidation technology to obtain the transferred graphene on the insulator. USE - Method for preparing graphene on insulator. ADVANTAGE - The low-temperature oxidation process is used to remove the sacrificial substrate, and the germanium substrate is effectively removed while the graphene film is left intact, avoiding the contamination caused during the removal of organic substances. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the process of preparation of graphene on insulator. (Drawing includes non-English language text) Step for providing a sacrificial substrate (S1) Step for forming graphene layer on the surface of the sacrificial substrate (S2) Step for forming medium layer on the surface of the graphene layer (S3) Step for providing supporting substrate and the bonded structure obtained on the upper surface of the support substrate (S4) Step for removing sacrificial substrate by oxidation technology to obtain the transferred graphene on the insulator (S5)