• 专利标题:   Converting in-situ amorphous carbon into graphene film useful in e.g. field of flexible electronic device and solar cell, comprises e.g. using physical vapor deposition technology to prepare graphene film precursor, and annealing the precursor to obtain graphene film under vacuum condition.
  • 专利号:   CN115011922-A
  • 发明人:   YANG L, WANG Y, WANG A, WANG Z, WANG L
  • 专利权人:   NINGBO INST MATERIALS TECHNOLOGY ENG C
  • 国际专利分类:   C23C014/06, C23C014/18, C23C014/35, C23C014/58, C23C016/40, C23C016/455, C23C016/56
  • 专利详细信息:   CN115011922-A 06 Sep 2022 C23C-014/06 202200 Chinese
  • 申请详细信息:   CN115011922-A CN10733430 24 Jun 2022
  • 优先权号:   CN10733430

▎ 摘  要

NOVELTY - Converting in-situ amorphous carbon into graphene film comprises using physical vapor deposition technology to prepare graphene film precursor, where the precursor comprises substrate, nickel catalytic layer and alumina sealing layer sequentially formed on the surface of the substrate, nickel catalyst layer and aluminum sealing layer, and annealing the precursor to obtain graphene film under vacuum conditions. USE - The method is useful in field of flexible electronic device, biomedical super capacitor, solar cell, and high frequency field field-effect transistor. ADVANTAGE - The method has simple process, and is easy to realize uniform preparation of large-area graphene film. The method uses the in-situ amorphous carbon layer as solid carbon source, using ALD technology to prepare nano-scale alumina hole sealing layer to seal the defect of the nickel catalytic layer, and controls the diffusion behavior of the carbon source. The graphene film has high quality and good uniformity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for graphene film prepared by the method.