▎ 摘　　要

NOVELTY - The method involves obtaining a dielectric constant range of a glass substrate. The glass substrate is heated about 600-1200 degrees centigrade. A graphene layer is formed on a surface of the glass substrate. A high dielectric constant material layer e.g. silicon nitride, silicon oxynitride, aluminum oxide, zirconium oxide, hafnium oxide, is formed on a surface of the graphene layer. Metal organic chemical vapor deposition is processed. A source electrode and a drain electrode are formed on the high dielectric constant material layer. USE - Method for manufacturing a graphene field-effect transistor (claimed). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene field-effect transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for manufacturing a graphene field-effect transistor. '(Drawing includes non-English language text)'