• 专利标题:   Manufacture of graphene involves forming double metal catalyst layer comprising two metal layers by calculating thickness ratio of metal layers, and growing graphene using chemical vapor deposition on double metal catalyst layer.
  • 专利号:   KR2016098637-A
  • 发明人:   CHOI J S, CHOI H K, CHOI C G, YU Y J, KIM J T, CHUNG K H, HWANG C Y
  • 专利权人:   ELECTRONICS TELECOM RES INST
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   KR2016098637-A 19 Aug 2016 C01B-031/04 201670 Pages: 11
  • 申请详细信息:   KR2016098637-A KR020054 10 Feb 2015
  • 优先权号:   KR020054

▎ 摘  要

NOVELTY - Manufacture of graphene involves forming a double metal catalyst layer comprising metal layer (m1) and metal layer (m2) by calculating thickness ratio of metal layer (m1) and metal layer (m2), and growing graphene using chemical vapor deposition on the double metal catalyst layer. USE - Manufacture of graphene (claimed). ADVANTAGE - The method enables manufacture of graphene having excellent permeability.