▎ 摘　　要

NOVELTY - The method involves mounting the ultra-thin film graphite formed by stacking several graphene layers on the measurement substrate. The imaging process is performed so as to image the ultra-thin film graphite mounted on substrate thorough a high-resolution imaging device. The frequency characteristics and the luminance value of the color region of substrate calculated from the captured image are compared with the frequency characteristics and the luminance value of reference substrate. USE - Method for measuring thickness of graphene layers of ultra-thin film graphite. Uses include but are not limited to channel material of transistor for ultra high-speed frequency application such as communication, quantum Hall effect element and inspection system of transistor/quantum Hall effect element and other complementary metal oxide semiconductor (CMOS) devices. ADVANTAGE - The frequency characteristics and the luminance value of the color region of substrate calculated from the captured image are compared with the frequency characteristics and the luminance value of reference substrate so that the brightness and darkness contrast peak change of the ultra-thin film graphite image can be acquired reliably and easily. Thus, the thickness of graphene layers of ultra-thin film graphite can be measured reliably with sufficient precision. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for thickness inspection system. DESCRIPTION OF DRAWING(S) - The drawings show the graphs illustrating the thickness measurement process of graphene layers of ultra-thin film graphite. (Drawing includes non-English language text)