• 专利标题:   Graphene transistor DNA sensor useful for detecting DNA, comprises substrate, grid electrode, source electrode, drain electrode, graphene channel, carbon dot being fixed on surface of grid electrode, and single-stranded probe DNA.
  • 专利号:   CN112578009-A
  • 发明人:   LI J, FAN Q
  • 专利权人:   UNIV HUBEI
  • 国际专利分类:   C12Q001/6825, G01N027/327
  • 专利详细信息:   CN112578009-A 30 Mar 2021 G01N-027/327 202139 Pages: 13 Chinese
  • 申请详细信息:   CN112578009-A CN10951673 30 Sep 2019
  • 优先权号:   CN10951673

▎ 摘  要

NOVELTY - Graphene transistor DNA sensor comprises (a) a substrate, and a grid electrode provided on the substrate, (b) a source electrode and a drain electrode, (c) a graphene channel being arranged between the source electrode and the drain electrode, and (d) a carbon dot being fixed on the surface of the grid electrode, and a single-stranded probe DNA being connected to the carbon dots to detect complementary DNA. USE - The graphene transistor DNA sensor is useful for detecting DNA (claimed). ADVANTAGE - The graphene transistor DNA sensor has minimum detection limit of DNA of 10-12 M, and detects DNA with high sensitivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing the graphene transistor DNA sensor, which involves (a) preparing grid electrode, source electrode and drain electrode on the surface of the substrate to provide a channel between the source and the drain electrode, (b) paving graphene on the channel between the source and drain electrode to obtain a graphene transistor, (c) fixing carbon dots on the grid surface of the graphene transistor, and (d) connecting single-stranded probe DNA to the surface of the fixed carbon dot to obtain a graphene transistor DNA sensor.