▎ 摘　　要

NOVELTY - Temperature sensor based on the piezoresistive properties of a suspended graphene film, has silicon as a lower substrate (2) and silica as an upper substrate (1). A cavity is engraved on the substrate. Two sides of the silica cavity is sputtered with gold electrode (4). The substrate of the sputtering gold electrode is transferred with a graphene film (5). The gold electrode is bonded with lead, and the substrate is packaged. The graphene film is provided with a poly(methyl methacrylate) protective layer. The length and width of the substrate are respectively 1.5×105μm×1.5×105μm×500 μm. The thickness of the silicon is 500 μm. The thickness of the silica is 300 nm, and gold electrode is 200 nm. The length and width of the cavity are respectively 1.5 mm ×1.5mm×40 µm. USE - Temperature sensor based on the piezoresistive properties of a suspended graphene film. ADVANTAGE - The sensor uses a cavity-suspended graphene film structure to form a seal on the gas in the cavity while increasing the mobility of the graphene film. This structure can convert environmental temperature changes into deformation of the graphene film, and then converts the deformation into the output resistance change of the structure, thus effectively avoiding the instability caused by the use of the graphene thermal resistance effect in the traditional graphene thermal sensing structure, and effectively improving the performance of the graphene micro electro-mechanical system sensor sensitivity. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the sensor. 1Upper substrate 2Lower substrate 4Gold electrode 5Film graphene