• 专利标题:   Graphene catalyzed substrate etching solution comprises phosphoric acid solution, glacial acetic acid solution and ferric chloride solution.
  • 专利号:   CN108364860-A
  • 发明人:   WANG S, ZHAO P, OUYANG X
  • 专利权人:   UNIV BEIHANG, UNIV XIANGTAN
  • 国际专利分类:   H01L021/205
  • 专利详细信息:   CN108364860-A 03 Aug 2018 H01L-021/205 201862 Pages: 10 Chinese
  • 申请详细信息:   CN108364860-A CN10094420 31 Jan 2018
  • 优先权号:   CN10094420

▎ 摘  要

NOVELTY - A graphene catalyzed substrate etching solution comprises phosphoric acid solution, glacial acetic acid solution and ferric chloride solution. USE - Graphene catalyzed substrate etching solution. ADVANTAGE - The graphene catalyzed substrate etching solution prevents generation of bubbles and damage of graphene layer, and ensures excellent performance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for graphene catalyzed substrate etching method, which involves (1) growing graphene on copper foil substrate by chemical vapor deposition method to obtain graphene/copper foil substrate, (2) placing graphene/copper foil substrate on spin coater, absorbing right amount of photoresist, dripping on graphene/copper foil substrate to grow graphene for performing photoresist spin coating, (3) drying graphene/copper foil substrate after spin coating in step (2) at 100-130 degrees C for 1-3 minutes to obtain dried photoresist/graphene/copper foil substrate, (4) placing photoresist/graphene/copper foil substrate in container containing etching solution for 3-5 minutes, (5) after the corrosion is over, replacing etching solution in container with deionized water to obtain pure photoresist/graphene, (6) attaching photoresist/graphene obtained to the surface of substrate, placing in acetone solution for 3-5 minutes, replacing acetone solution with deionized water and drying.