• 专利标题:   Transistor for adjusting position movement and bending deformation of graphene, has obstacle regulating circuits provided in lower end portion of graphene, and obstacle control unit for controlling height of schottky obstacle.
  • 专利号:   WO2015108299-A2, KR2015084363-A, KR2015084692-A, KR2015084693-A, KR2015084694-A, KR2015084695-A, KR2015084696-A, KR2015084698-A, KR2015084699-A, KR2015084700-A
  • 发明人:   LEE Y T
  • 专利权人:   LEE Y T
  • 国际专利分类:   H01L029/16, H01L029/812, H01L041/02, H01L041/04, H01L041/09, H01L041/18, H01L041/08, H01L041/083, H01L041/27, C01B031/04, H01L041/22
  • 专利详细信息:   WO2015108299-A2 23 Jul 2015 H01L-029/16 201551 Pages: 66
  • 申请详细信息:   WO2015108299-A2 WOKR000185 08 Jan 2015
  • 优先权号:   KR004303, KR035027, KR035032, KR035294, KR035299, KR035300, KR047877, KR047878, KR049889

▎ 摘  要

NOVELTY - The transistor has multiple obstacle regulating circuits (300, 500) provided in a lower end portion of graphene. The graphene is provided with a Piezo material, a synthetic material and a magnetic particle (110). An electric charge is provided in the graphene to calculate an electrostatic level of the obstacle regulating circuits. The electric charge controls work function of the graphene. An obstacle control unit controls height of a schottky obstacle based on the work function of the graphene. USE - Transistor for adjusting position movement and bending deformation of graphene. ADVANTAGE - The transistor has high hundredfold emergency processing speed so as to so as to select Fermi level about bending of the graphene by controlling the work function of the graphene, so that generation of stand-by power problem in the schottky obstacle can be avoided. DESCRIPTION OF DRAWING(S) - The drawing shows cross sectional views of a transistor. '(Drawing includes non-English language text)' Magnetic particle (110) Obstacle regulating circuits (300, 500)