▎ 摘　　要

NOVELTY - A heterojunction graphene nanoribbon comprises substrate (1), 1st graphene nanoribbon element (3) which is provided on substrate and has armchair type edge structure along longitudinal direction, 2nd graphene nanoribbon element (4) which has armchair type edge structure along longitudinal direction, is provided on substrate, and covalently bonds to 1st graphene nanoribbon element in longitudinal direction, and 3rd graphene nanoribbon element (5) which has armchair type edge structure along longitudinal direction, and covalently bonds to 2nd graphene nanoribbon element. USE - A heterojunction graphene nanoribbon for resonant tunneling diode (claimed). ADVANTAGE - The method stably produces heterojunction graphene nanoribbon with controlled region length. DETAILED DESCRIPTION - A heterojunction graphene nanoribbon comprises substrate (1), 1st graphene nanoribbon element (3) which is provided on substrate and has armchair type edge structure along longitudinal direction, 2nd graphene nanoribbon element (4) which has armchair type edge structure along longitudinal direction, is provided on substrate, and covalently bonds to 1st graphene nanoribbon element in longitudinal direction, and 3rd graphene nanoribbon element (5) which has armchair type edge structure along longitudinal direction, and covalently bonds to 2nd graphene nanoribbon element in longitudinal direction. Widths of 1st to 3rd graphene nanoribbon elements in transverse direction are different from each other. INDEPENDENT CLAIMS are included for: (1) resonant tunneling diode comprising insulated substrate, 1st graphene nanoribbon element which is provided on insulated substrate and has armchair type edge structure along longitudinal direction, 2 2nd graphene nanoribbon elements which have armchair type edge structure along longitudinal direction, and covalently bond to both sides of 1st graphene nanoribbon element in longitudinal direction, 2 3rd graphene nanoribbon elements which have armchair type edge structure along longitudinal direction, and covalently bond to side of 2nd graphene nanoribbon element in longitudinal direction, in which band gap of 2nd graphene nanoribbon element is greater than the band gap of 1st graphene nanoribbon element, and band gap of 1st graphene nanoribbon element is greater than the band gap of 3rd graphene nanoribbon element, and 3rd graphene nanoribbon elements contain electrode; and (2) manufacture of resonant tunneling diode which involves depositing precursor molecule of 1st graphene on metal monocrystal substrate having terrace (2) with width of 1-5 nm and having monatomic step, forming armchair type edge structure of 1st graphene nanoribbon element along longitudinal direction, depositing precursor molecule of 2nd graphene and covalently bonding to both sides of 1st graphene nanoribbon element along longitudinal direction, forming armchair type edge structure of 2nd graphene nanoribbon element along longitudinal direction, depositing precursor molecule of 3rd graphene and covalently bonding to side of 2nd graphene nanoribbon element along longitudinal direction, forming armchair type edge structure of 3rd graphene nanoribbon element along longitudinal direction, and forming electrode in 3rd graphene nanoribbon element on both sides. DESCRIPTION OF DRAWING(S) - The drawing shows an explanatory diagram of the heterojunction graphene nanoribbon. (Drawing includes non-English language text). Substrate (1) Terrace (2) 1st graphene nanoribbon element (3) 2nd graphene nanoribbon element (4) 3rd graphene nanoribbon element (5)