▎ 摘　　要

NOVELTY - The method involves forming an insulating layer on a surface of a n-type silicon chip. A bottom electrode is located on a lower surface of the n-type silicon chip. A top electrode is located on the insulation layer. A graphene is coated on a carbon film. The carbon film is covered on a silicon dioxide substrate. The silicon dioxide substrate is matched with a boron element by using a ECR plasma sputtering process. The carbon film is formed between the n-type silicon chip and the top electrode and contacted with the graphene. The insulating layer is made of silicon dioxide or insulating metal oxide materials. USE - High-sensitivity photoelectric detector manufacturing method. ADVANTAGE - The method enables increasing sensitive detection ability of weak light, reducing processing cost and simplifying photoelectric detector manufacturing steps. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of a high-sensitivity photoelectric detector.