▎ 摘　　要

NOVELTY - The structure (100) has a graphene-metal barrier (130) arranged on a substrate (110), where the graphene-metal barrier includes graphene layers (131) and metal particles (132) on a grain boundary of each of the graphene layers and between the graphene layers. A conductive layer (150) is arranged on the graphene-metal barrier. The substrate includes a semiconductor and an insulator, where the graphene layers include three to ten graphene layers, the metal particles include ruthenium, aluminum , titanium, platinum , tantalum , rhodium and iridium and other metal particles are arranged between the substrate and the graphene layers and between the graphene layers and the conductive layer. USE - Interconnect structure for use in an electronic device (claimed). ADVANTAGE - The structure utilizes an interconnect structure including the graphene-metal barrier, such that a metal diffusion is interrupted when metal particles limit and/or block a grain boundary of the graphene layer, thus reducing increase in resistance of the conductive layer and increasing conductivity of the interconnect structure. DETAILED DESCRIPTION - Independent claims are included following (1) a method for manufacturing an interconnect structure; and (2) an electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of an interconnect structure including a graphene-metal barrier. Interconnect structure (100) Substrate (110) Graphene-metal barrier (130) Graphene layers (131) Metal particles (132) Conductive layer (150)