• 专利标题:   Plate varactor for integrated circuit used as part of electronic product has single layer of graphene material disposed over first electrode in contact with dielectric layer to contribute quantum capacitance component to dielectric layer.
  • 专利号:   US2013113081-A1, US9893212-B2
  • 发明人:   CHEN Z, HAN S, KOSWATTA S O, VALDES G A
  • 专利权人:   INT BUSINESS MACHINES CORP, INT BUSINESS MACHINES CORP, CHEN Z, HAN S, KOSWATTA S O, VALDES G A
  • 国际专利分类:   B82Y030/00, B82Y040/00, B82Y099/00, H01L021/329, H01L029/93, B82Y010/00, H01L029/16, H01L049/02
  • 专利详细信息:   US2013113081-A1 09 May 2013 H01L-029/93 201332 Pages: 13 English
  • 申请详细信息:   US2013113081-A1 US291596 08 Nov 2011
  • 优先权号:   US291596

▎ 摘  要

NOVELTY - The plate varactor has a dielectric substrate (202), a first electrode (206) embedded in the surface of substrate, and a capacitor dielectric layer (208) disposed over the first electrode. A single layer of graphene material (204) is disposed over the first electrode in contact with the dielectric layer to contribute a quantum capacitance component to dielectric layer. An upper electrode (210) is formed on the layer of graphene material. The capacitor dielectric includes high-K dielectric. The first electrode and upper electrode extend to cover lateral extents of layer of graphene material. USE - Plate varactor for integrated circuit used as part of electronic product. Uses include but are not limited to motherboard, toys, low-end product, advanced computer product having display, keyboard, or other input device and central processor. ADVANTAGE - Minimizes contact resistance and improves varactor's quality factor since both electrodes completely cover the graphene area. Simplifies workflow and reduces cost since dielectric is formed flat to enable application of the graphene material by dipping process or transfer process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for fabricating a plate varactor. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of the upper electrode formed on dielectric layer and over the graphene layer. Substrate (202) Graphene material (204) First electrode (206) Capacitor dielectric layer (208) Upper electrode (210)