▎ 摘　　要

NOVELTY - A monocrystal substrate is prepared and a monocrystal metal layer is grown on the substrate. A graphene thin film is formed on the metal layer. The substrate is ( alpha )-alumina or magnesium oxide or has perovskite structure. The metal layer contains nickel, copper, cobalt, ruthenium or platinum. The metal layer growing process is carried out in hydrocarbon gas chosen from methane, acetylene, ethylene, ethane, propene and propane, and carrier gas chosen from hydrogen, argon and nitrogen. The graphene film is melted with ferric chloride to form graphene. USE - Manufacture of graphene film for forming graphene (claimed). ADVANTAGE - The graphene thin film having excellent electrical property and mechanical property is formed.