▎ 摘　　要

NOVELTY - Graphene manufacturing system (1) comprises: a furnace body (10) having a working chamber for holding the work piece; a first gas source (20), connected with the working chamber for providing a first gas; a first valve (30) between the working chamber and first gas source; a second gas source (40), connected with the working chamber for providing a second gas; a second valve between the working chamber and second gas source; a third gas source, connected with the working chamber for providing a third gas; a third valve between the working chamber and third gas source; and a control device. USE - The graphene manufacturing system is useful for growing graphene layers on the surface of a work piece (claimed). ADVANTAGE - The system: utilizes multiple pulses of gas flows to grow graphene layers, thus providing graphene layers with low sheet resistivity; and provides graphene layers with improved quality, and big grain sizes. DETAILED DESCRIPTION - Graphene manufacturing system (1) comprises: a furnace body (10) having a working chamber for holding the work piece; a first gas source (20), connected with the working chamber for providing the working chamber with a first gas; a first valve (30), configured between the working chamber and the first gas source; a second gas source (40), connected with the working chamber for providing the working chamber with a second gas; a second valve, configured between the working chamber and the second gas source; a third gas source, connected with the working chamber for providing the working chamber with a third gas; a third valve, configured between the working chamber and the third gas source; and a control device, coupled with the first valve, second valve and third valve for storing a process data. The process data is corresponding to a first process, second process and third process, each process seriatim comprising a first command, second command, third command and fourth command, where the first command is for increasing the flow rate of the corresponding valve, the second command is for decreasing the flow rate of the corresponding valve, the third command is for increasing the flow rate of the corresponding valve, the fourth command is for decreasing the flow rate of the corresponding valve. The control device controls the first valve, second valve and third valve respectively by the first process, second process and third process. The control device controls the flow rate of the valves to import the first gas into the working chamber, where the high temperature catalyzes the decomposition of the first gas to generate many carbon atoms, and the carbon atoms form the graphene layers on the insulated surfaces of the work piece. An INDEPENDENT CLAIM is also included for manufacturing graphene, applied to grow graphene layers on an insulated surface of a work piece, comprising: preparing a furnace body having a working chamber; preparing the work piece; preparing a first gas, second gas and third gas; setting the work piece in the working chamber; importing the first gas into the working chamber by a first process; importing the second gas into the working chamber by a second process; and importing the third gas into the working chamber by a third process, where the first process comprises a preprocess stage and a following reacting stage comprising a first segment, second segment, third segment and fourth segment, the import flow rate of the first gas during the first segment is higher than during the pre process stage, the average import flow rate of the first gas during the second segment is lower than during the first segment, the average import flow rate of the first gas during the third segment is higher than during the second segment, and the average import flow rate of the first gas during the fourth segment is lower than during the third segment. DESCRIPTION OF DRAWING(S) - The figure shows a schematic diagram illustrating the graphene manufacturing system. Graphene manufacturing system (1) Furnace body (10) First gas source (20) First valve (30) Second gas source (40)