▎ 摘　　要

NOVELTY - The method involves forming (101) isolation layer on a graphene layer. The photo-etching glue layer is formed (102) on the isolation layer. The photo-etching glue layer is provided (103) for a patterning process according to the patterned photo-resist layer of isolation layer for etching process. The patterned isolation layer is formed (104). The graphene layer is formed (105). USE - Graphene patterning method. ADVANTAGE - The graphene patterning process is performed to avoid time existing technology in photo-resist material stripping the graphene thin film caused by falling or light-sensitive lacquer residue the graphene film layer of bad condition, and to increase the yield of the product in the condition of low production cost in efficient manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the graphene patterning process. (Drawing includes non-English language text) Step for forming isolation layer on graphene layer (101) Step for forming photo-etching glue layer on isolation layer (102) Step for providing photo-etching glue layer for patterning process (103) Step for forming patterned isolation layer (104) Step for forming graphene layer (105)