• 专利标题:   Preparing doped graphene by converting polycrystalline metal catalyst thin film into single crystal metal catalyst thin film through abnormal grain growth and synthesizing doped graphene on thin film by chemical vapor deposition.
  • 专利号:   KR2021026649-A
  • 发明人:   KIM K, NAM J
  • 专利权人:   KOREA ELECTRIC POWER CORP, UNIV SEJONG IND ACAD COOP FOUND
  • 国际专利分类:   B01J023/755, B01J035/02, C01B032/186
  • 专利详细信息:   KR2021026649-A 10 Mar 2021 C01B-032/186 202126 Pages: 15
  • 申请详细信息:   KR2021026649-A KR107718 30 Aug 2019
  • 优先权号:   KR107718

▎ 摘  要

NOVELTY - Doped graphene is prepared by converting polycrystalline metal catalyst thin film into single crystal metal catalyst thin film through abnormal grain growth method and synthesizing doped graphene on single crystal metal catalyst thin film by chemical vapor deposition. USE - Preparation of doped graphene (claimed). ADVANTAGE - The doped graphene production method is capable of controlling a dopant distribution pattern of doped graphene by controlling a crystal grain distribution pattern of a catalyst metal.