• 专利标题:   Connection structure for semiconductor device package, comprises intermediate conductive layer has first coefficient of thermal expansion, and first conductive layer and intermediate conductive layer include graphene.
  • 专利号:   US2019348344-A1, CN110459519-A
  • 发明人:   LU W, FANG J, LV W, FANG R
  • 专利权人:   ADVANCED SEMICONDUCTOR ENG INC, ADVANCED SEMICONDUCTOR ENG INC
  • 国际专利分类:   H01L023/00, H01L023/373, H01L023/522, H01L023/532, H01L029/16, H01L023/485, H01L023/48, H01L023/31, H01L021/56, H01L023/367
  • 专利详细信息:   US2019348344-A1 14 Nov 2019 H01L-023/373 201989 Pages: 25 English
  • 申请详细信息:   US2019348344-A1 US974547 08 May 2018
  • 优先权号:   US974547

▎ 摘  要

NOVELTY - The connection structure comprises an intermediate conductive layer, which has a first surface and a second surface opposite to the first surface. The intermediate conductive layer has a first coefficient of thermal expansion (CTE). A first conductive layer is in contact with the first surface of the intermediate conductive layer. The first conductive layer has a second CTE. A second conductive layer is in contact with the second surface of the intermediate conductive layer. The first conductive layer and the second conductive layer are formed of the same material. One of the first CTE and the second CTE is negative and the other is positive. One of the first conductive layer and the intermediate conductive layer includes 6-membered ring containing carbon atoms. One of the first conductive layer and the intermediate conductive layer includes graphene. USE - Connection structure for semiconductor device package. ADVANTAGE - The graphene layers facilitate the heat dissipation of the semiconductor device package. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a semiconductor device package. Leadframe (50) Electronic component (51) Package body (52) Graphene layer (54) Conductive layer (55)