▎ 摘　　要

NOVELTY - The graphene transistor (1) comprises a support substrate (11) and a graphene film (13) that is arranged on the support substrate. An ohmic electrode (14) is arranged on the graphene film. The graphene film is provided with an uneven surface section (13w). The shape of the recessed unit in the uneven surface section of the graphene film is cone shape, column shape, polygon cone form, polygonal-prism shape and groove shape. The support substrate is a silicon carbide substrate. An intermediate layer is arranged between the support substrate and the graphene film. USE - Graphene transistor. ADVANTAGE - The graphene transistor comprises a support substrate and a graphene film that is arranged on the support substrate, and thus enables redcuing contact resistance of an ohmic electrode and a graphene film for facilitating development of the transistor using the graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method for graphene transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic sectional view of a graphene transistor. Graphene transistor (1) Support substrate (11) Graphene film (13) Uneven surface section (13w) Ohmic electrode (14)