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  • 专利标题:   Graphene device comprises a source and a drain, formed on a substrate, a graphene channel formed on the substrate between the source and the drain, and a gate formed on a dielectric layer on the graphene channel.
  • 专利号:   US2012261645-A1, KR2012116167-A, KR1224866-B1, US8637851-B2
  • 发明人:   CHO B J, MUN J H
  • 专利权人:   KOREA ADV INST SCI TECHNOLOGY, KOREA ADV INST SCI TECHNOLOGY, KOREA ADVANCED INST SCI TECHNOLOGY
  • 国际专利分类:   B82Y099/00, H01L029/08, H01L029/786, H01L021/336, H01L029/78
  • 专利详细信息:   US2012261645-A1 18 Oct 2012 H01L-029/08 201270 Pages: 13 English
  • 申请详细信息:   US2012261645-A1 US176043 05 Jul 2011
  • 优先权号:   KR033753

▎ 摘　　要

NOVELTY - Graphene device, comprises: a source and a drain formed on a substrate; a graphene channel formed on the substrate between the source and the drain; and a gate formed on a dielectric layer on the graphene channel, in which at least one of the source and the drain are spaced apart from the graphene channel by a physical gap. USE - Used as a graphene device. ADVANTAGE - The graphene device exhibits high electron mobility, and thus shows high on/off current ratio.