• 专利标题:   Manufacture of graphene film for photoelectron engineering device, involves preparing monocrystal substrate, providing monocrystalline catalyst layer, processing, heating gaseous carbon source and cooling.
  • 专利号:   JP2011178644-A, JP5660425-B2
  • 发明人:   FUJITA D, XU M S, JO A
  • 专利权人:   DOKURITSU GYOSEI HOJIN BUSSHITSU ZAIRYO, DOKURITSU GYOSEI HOJIN BUSSHITSU ZAIRYO
  • 国际专利分类:   C01B031/02, C23C014/14, C23C016/26, C30B029/02, C30B029/66
  • 专利详细信息:   JP2011178644-A 15 Sep 2011 C30B-029/66 201162 Pages: 12 Japanese
  • 申请详细信息:   JP2011178644-A JP047225 04 Mar 2010
  • 优先权号:   JP047225

▎ 摘  要

NOVELTY - A monocrystal substrate (100) is prepared. The monocrystalline catalyst layer (101) is provided on prepared substrate. The resultant monocrystal substrate is processed, gaseous carbon source is heated and cooled to obtain graphene film (102). USE - Manufacture of graphene film used for photoelectron engineering device e.g. sensor and electrode, and hydrogen storage medium. ADVANTAGE - The method economically provides high-quality and uniform graphene film having excellent efficiency. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view explaining the manufacture of graphene film. Monocrystal substrate (100) Catalyst layer (101) Graphene film (102)