▎ 摘　　要

NOVELTY - Gallium-gallium antimonide silicon-based near infrared photoelectric detector has a silicon wafer (1), a gallium-gallium antimonide nanomaterial layer (2) compounded on one surface of the silicon wafer, a top electrode (3) compounded on surface of the nanomaterial layer, and a bottom electrode (4) compounded on the other side of the silicon wafer. USE - Gallium-gallium-antimonide silicon based near-infrared photoelectric detector. ADVANTAGE - The single-layer graphene can more effectively collect hole and electron, and enhance the conductivity of the device. The heterojunction of gallium-gallium antimonide and silicon improves the detection performance and detection spectrum width of the silicon and improves the response speed of the device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the gallium-gallium antimonide silicon-based near infrared photoelectric detector, which involves: (A) coating gallium-gallium antimonide nanomaterial slurry on one surface of silicon wafer; (B) drying to form gallium-gallium antimonide nanomaterial layer; (C) transferring the top electrode material to the surface of the gallium-gallium antimonide nanomaterial layer; (D) forming top electrode; and (E) compounding the bottom electrode surface of the silicon chip. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the gallium-gallium-antimonide silicon based near-infrared photoelectric detector. Silicon wafer (1) Gallium-gallium antimonide nanomaterial layer (2) Top electrode (3) Bottom electrode (4)