• 专利标题:   Pseudo-reference electrode used in ion-selective electrode sensor, and ion-selective field effect transistor, comprises pseudo-reference glass material, which is chalcogenide glass or halide glass, backed by silver conductor of silver metal.
  • 专利号:   CA3155252-A1, US2022332631-A1
  • 发明人:   DY E, QU W, XIE Z, SHEN J, TUFA K Y
  • 专利权人:   NAT RES COUNCIL CANADA, NAT RES COUNCIL CANADA
  • 国际专利分类:   C07K000/00, C03C003/12, C03C003/32, G01N027/30, G01N027/36
  • 专利详细信息:   CA3155252-A1 09 Oct 2022 C07K-000/00 202296 Pages: 41 English
  • 申请详细信息:   CA3155252-A1 CA3155252 06 Apr 2022
  • 优先权号:   US201042P, US658366

▎ 摘  要

NOVELTY - Pseudo-reference electrode (20) comprises a pseudo-reference glass material backed by a silver conductor comprising silver metal, where the pseudo-reference glass material is a chalcogenide glass comprising a silver chalcogenide (I), or a halide glass comprising a silver halide and/or at least one glass-forming oxide of a metal or a metalloid, or their composites. USE - The electrode is useful as a reference electrode in a reference half-cell of an ion-selective electrode sensor, and an ion-selective field effect transistor (all claimed). ADVANTAGE - The electrode: is free of an element to be analyzed by the ion-selective electrode sensor or the ion-selective field effect transistor; and does not need to be kept in conditioning electrolyte when stored. DETAILED DESCRIPTION - Pseudo-reference electrode (20) comprises a pseudo-reference glass material backed by a silver conductor comprising silver metal, where the pseudo-reference glass material is a chalcogenide glass comprising a silver chalcogenide of formula (Ag2Ch) (I), or a halide glass comprising a silver halide and/or at least one glass-forming oxide of a metal or a metalloid, or their composites. Ch=chalcogen. INDEPENDENT CLAIMS are also included for: use of the pseudo-reference glass material in the pseudo-reference electrode, preferably in reference half-cell (40) of ion-selective electrode sensor (10), and an ion-selective field effect transistor; a reference half-cell of ion-selective electrode sensor, comprising the pseudo-reference electrode; an ion-selective electrode sensor comprising the reference half-cell, a sensing half-cell (12) and a voltmeter, the reference half-cell and the sensing half-cell being connected to the voltmeter; and ion-selective field effect transistor comprising the pseudo-reference electrode. DESCRIPTION OF DRAWING(S) - The figure illustrates ion-selective electrode sensor comprising the pseudo-reference electrode. 10Ion-selective electrode sensor 12Sensing half-cell 20Pseudo-reference electrode 22Standard electrolyte 40Reference half-cell