▎ 摘　　要

NOVELTY - Anode with ultra-low work function, comprises monocrystalline silicon layer (1), hafnium(IV) oxide layer (2), single layer of graphene (3) and additional layer (4). The surface of the single crystal silicon layer is provided with a layer of hafnium(IV) oxide layer. The upper surface of the hafnium(IV) oxide layer is attached with a single layer of graphene layer having a length of 5x 5mm and the upper surface of the monolayer graphene layer is coated with an additional layer. The thickness of the hafnium(IV) oxide layer is 20 nanometer. USE - Anode with ultra-low work function. ADVANTAGE - The anode with ultra low work function has work function less than 3 electron volts which helps to improve the energy conversion efficiency of the anode. DETAILED DESCRIPTION - Anode with ultra-low work function, comprises monocrystalline silicon layer (1), hafnium(IV) oxide layer (2), single layer of graphene (3) and additional layer (4). The surface of the single crystal silicon layer is provided with a layer of hafnium(IV) oxide layer. The upper surface of the hafnium(IV) oxide layer is attached with a single layer of graphene layer having a length of 5x 5mm and the upper surface of the monolayer graphene layer is coated with an additional layer. The thickness of the hafnium(IV) oxide layer is 20 nanometer. The monolayer graphene layer shows static electricity. The additional layer is a cesium element layer or an oxygen element layer, and the thickness of the additional layer is an atomic layer thickness. An INDEPENDENT CLAIM is included for a method for preparing anode with ultra-low work function which involves: (A) growing hafnium(IV) oxide layer of thickness 20 nanometer by atomic layer deposition on single crystal silicon layer; (B) depositing graphene by chemical vapor deposition on thic copper; (C) transferring single graphene layer upper surface of the hafnium(IV) oxide layer grown on the single crystal silicon layer; (D) plating one-atomic-layer thickness of cesium element layer or oxygen element on the upper surface of the single-layer graphene layer; (E) plating palladium with a thickness of 50 nanometer as a metal electrode on hafnium(IV) oxide layer at the bottom of the high-doped single crystal silicon layer; and (F) applying direct current between the palladium and the high-homo-monocrystalline silicon layer at the bottom of the hafnium(IV) oxide layer so that the monolithic graphene layer achieves static electricity within the complex. DESCRIPTION OF DRAWING(S) - The drawing shows schemativ view of anode with ultra-low work function. Monocrystalline silicon layer (1) Hafnium (IV) oxide layer (2) Single layer of graphene (3) Additional layer (4)