▎ 摘　　要

NOVELTY - The method for the manufacture of an electronic device precursor involves: providing a silicon wafer having a growth surface; forming an insulative layer on the growth surface having a thickness of from 1 nm to 10 µm, preferably 2 nm to 1 µm; forming a graphene monolayer or multi-layer structure on the insulative layer; optionally forming one or more further layers and/or electrical contacts on the graphene monolayer or multi-layer structure; forming a polymer coating over the graphene monolayer or multi-layer structure and any further layers and/or electrical contacts; thinning the silicon wafer, or removing the silicon wafer to provide an exposed surface of the insulative layer, by etching with an etchant, where the silicon wafer is optionally subjected to a grinding step before etching; and optionally dissolving away the polymer coating, where the insulative layer and the polymer coating are resistant to etching by the etchant. USE - Method for the manufacture of an electronic device precursor e.g. organic LED, biosensor devie precursor, transistor device precursor,capacitor device precursor and Hall-sensor device precursor, and in light emitting or light sensitive device, capacitor and tunnel transistor (all claimed). ADVANTAGE - The step of forming an insulative layer is performed in a CVD or MOCVD reaction chamber and the formation of graphene and the optional further layer(s) are also performed in the same reaction chamber thus reducing the complexity of the manufacturing process. The device has high sensitivity to changes in the magnetic field allowing for precise current sensing. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) the electronic device precursor; (2) a conductive substrate for the electronic device; and (3) a light emitting or light sensitive device; (4) capacitor; and (5) a tunnel transistor DESCRIPTION OF DRAWING(S) - The drawing shows a method for manufacturing a tunnel transistor.