▎ 摘　　要

NOVELTY - The image sensor (100) has a first substrate (110) with a first surface and a second surface. The first and second surfaces are opposite surfaces of the first substrate. The first substrate includes an active pixel sensor area. The active pixel sensor area includes a photoelectric conversion region. The sensor has a microlens (184) on first surface. A multilayered interconnection structure (128) is on second surface. A heat spreading layer (160) on the first surface or the second surface includes a synthetic diamond layer, a graphene layer, or a DLC layer. USE - Image sensor for converting optical image signal into electric signal. ADVANTAGE - An image sensor is provided by which a dark current is reduced, and uniform, excellent resolution is obtained in the entire active pixel sensor area. A sufficiently great and non-uniform dark current in the active pixel sensor area (APS) to result in dark shading on the APS is reduced and/or prevented from occurring in the active pixel sensor area adjacent to the source of generated heat and thus, the image sensor provides a uniform or uniform resolution. The image sensor provides an improved resolution based on the reduction and/or prevention of a sufficiently large and non-uniform dark current to induce dark shading on the APS. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of an image sensor. Image sensor (100) First substrate (110) Multilayered interconnection structure (128) Heat spreading layer (160) Microlens (184)