▎ 摘　　要

NOVELTY - The photodetector has a substrate layer that is arranged on a bottom layer. A vertical structure is arranged on an upper surface of the substrate layer. An upper surface of the vertical structure is provided with an electrode layer, where the vertical structure is made up of bottom layer graphene, zinc oxide nanobelt and upper layer graphene. The substrate layer is provided with a silicon layer and a silicon dioxide layer in sequence from bottom to top. The bottom layer graphene is arranged on an upper surface of the silicon dioxide layer. Zinc oxide nanobelts are arranged on a left side of an upper surface of an underlying graphene. USE - Graphene-zinc oxide-graphene vertical photodetector used in ultraviolet photoelectric transistor technology field. Uses include but are not limited to fluorescence analysis technology, biochemical technology, environment monitoring, optical information high density storage, alarm and counterfeit money identification and medical care field. ADVANTAGE - The graphene-zinc oxide nano-belt-graphene vertical photoelectric detector greatly reduces the transit time length and the carrier in the depletion layer, so as to reduce the response time of the device, and improve the response speed. The photo-generated electron hole greatly improves the separation efficiency, and the electron hole pair separation under the action of the electric field, due to the ultra-short channel in the vertical direction. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for constructing a graphene-zinc oxide-graphene vertical photodetector. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a method for constructing a graphene-zinc oxide-graphene vertical photodetector (Drawing includes non-English language text).