▎ 摘　　要

NOVELTY - Formation of nanocrystalline graphene (40) involves arranging a substrate (20) comprising a material having certain permittivity or lower in a reaction chamber, forming a protective layer (30) on the substrate, injecting reaction gas comprising mixture of carbon source gas, an inert gas and hydrogen gas into the reaction chamber, generating a plasma of the reaction gas in the reaction chamber, and growing nanocrystalline graphene directly on the surface of the protective layer using the plasma of the reaction gas at 700 degrees C. USE - Formation of nanocrystalline graphene used for device (claimed) such as semiconductor device. ADVANTAGE - The method forms nanocrystalline graphene directly on the surface of the protective layer in a short period of time. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a device, which consists of a substrate comprising a material having certain permittivity or lower, a protective layer on the substrate and nanocrystalline graphene on the protective layer. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a semiconductor device. Substrate (20) Protective layer (30) Nanocrystalline graphene (40) Copper layer (50) Semiconductor device (S)