• 专利标题:   Formation of nanocrystalline graphene used for semiconductor device, involves arranging substrate in chamber, forming protective layer, injecting reaction gas, generating plasma, and growing nanocrystalline graphene on protective layer.
  • 专利号:   US2020039827-A1, KR2020015279-A, US10850985-B2
  • 发明人:   JUNG A, SHIN K, BYUN K, SHIN H, LIM H, NAM S, SONG H, CHO Y, JUNG A R, SHIN K W, BYUN K E, SHIN H J, LIM H S, NAM S G, SONG H J, CHO Y C
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   C01B032/186, C23C016/26, C23C016/505, C23C016/511, H01L021/02, H01L029/04, H01L029/06, H01L029/16, H01L021/324, H01L029/12
  • 专利详细信息:   US2020039827-A1 06 Feb 2020 C01B-032/186 202014 Pages: 18 English
  • 申请详细信息:   US2020039827-A1 US233513 27 Dec 2018
  • 优先权号:   KR090903

▎ 摘  要

NOVELTY - Formation of nanocrystalline graphene (40) involves arranging a substrate (20) comprising a material having certain permittivity or lower in a reaction chamber, forming a protective layer (30) on the substrate, injecting reaction gas comprising mixture of carbon source gas, an inert gas and hydrogen gas into the reaction chamber, generating a plasma of the reaction gas in the reaction chamber, and growing nanocrystalline graphene directly on the surface of the protective layer using the plasma of the reaction gas at 700 degrees C. USE - Formation of nanocrystalline graphene used for device (claimed) such as semiconductor device. ADVANTAGE - The method forms nanocrystalline graphene directly on the surface of the protective layer in a short period of time. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a device, which consists of a substrate comprising a material having certain permittivity or lower, a protective layer on the substrate and nanocrystalline graphene on the protective layer. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a semiconductor device. Substrate (20) Protective layer (30) Nanocrystalline graphene (40) Copper layer (50) Semiconductor device (S)