▎ 摘　　要

NOVELTY - Preparation of memristor based on two-dimensional layered copper-based chalcogenide involves depositing conductive film on a substrate (1) using sputtering or evaporation process to be used as bottom electrode (2), preparing two-dimensional layered copper-based chalcogenide (3) material, transferring the chalcogenide material to the bottom electrode by transfer method to be used as memristor functional layer, depositing a copper conducting layer (4) on the functional layer using sputtering or evaporation process and evaporating a metal layer on the copper conductive layer to be used as a top electrode (5). USE - Preparation of memristor (claimed) used in integrated computing system and artificial neural network. ADVANTAGE - The method enables preparation of memristor having low switching voltage ( < 1V), low migration barrier, and no surface additional heterogeneous layer, with high directivity and high switching voltage repeatability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the memristor prepared by the above method, which comprises substrate, bottom electrode, two-dimensional layered copper-based chalcogenide, copper conducting layer and top electrode from bottom to top. DESCRIPTION OF DRAWING(S) - The drawing shows a schemetic view of the memristor based on two-dimensional layered copper-based chalcogenide. 1Substrate 2Bottom electrode 3Two-dimensional layered copper-based chalcogenide 4Copper conductive layer 5Top electrode