▎ 摘　　要

NOVELTY - The method involves growing group III-nitride ternary alloy material on gallium nitride substrate to form a hetero-structure as an emitter region and a first barrier layer. An electrode is grown on a heterojunction by photolithography technology. A graphene is insulated by ion etching technology. The graphene is transferred to a surface of hetero-structure as a base region. A base electrode is formed by photoetching technology. A gallium nitride thin film as a second barrier layer is grown on the graphene using plasma enhanced atomic layer deposition (PEALD). A metal collector region is formed to finish an electron transistor of high-frequency graphene/gallium nitride structure. USE - Method for preparing high-frequency gallium nitride/graphene heterojunction electron transistor. ADVANTAGE - The process steps are reduced, and the electron emission efficiency is effectively improved from the emitter to base. The thermionic device efficiency is enhanced. The production process is simplified, and the size of the device is reduced. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating the process for preparing high-frequency gallium nitride/graphene heterojunction electron transistor. (Drawing includes non-English language text)