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  • 专利标题:   Depositing graphene material on high-k gate dielectric used in preparation of transistor, involves substrate sample, where substrate is coated with graphite material.
  • 专利号:   CN103903961-A, WO2015154724-A1, CN103903961-B
  • 发明人:   FU Y, GUO J, HUANG R, REN L, ZHANG L, WEI Z, YE Q, ZHANG X, GU Y, JIA Y
  • 专利权人:   UNIV PEKING
  • 国际专利分类:   C23C016/04, C23C016/455, H01L021/02, H01L021/285
  • 专利详细信息:   CN103903961-A 02 Jul 2014 H01L-021/02 201460 Pages: 9 Chinese
  • 申请详细信息:   CN103903961-A CN10145622 11 Apr 2014
  • 优先权号:   CN10145622

▎ 摘　　要

NOVELTY - Graphene material deposition on high-k gate dielectric involves selecting substrate sample, where the substrate is coated with graphite material. The obtained substrate is scanned with electric microscope in a vacuum chamber in presence of low energy beam at an acceleration voltage of 1-15 kilovolt for 30 second to 5 minutes. The obtained product is processed in assistive listening device to obtain desired product. USE - Method for depositing graphene material on high-k gate dielectric used in preparation of transistor (claimed).