▎ 摘　　要

NOVELTY - The method involves adhering a layer of graphene film on a P surface of a large-power laser chip of a gallium arsenide-based large-power laser chip. The low-temperature welding method is packaged to the base heat sink using the graphene-In52Sn48 alloy mixed solder. The GaAs-based high power laser chip composed of an N-surface metal electrode contact a GaAs substrate, an N-limiting layer, an SiO2 current injection barrier layer, and a P-surface metal electrode layer contact. USE - Gallium arsenide (GaAs)-based high power chip laser method for improving radiating efficiency. ADVANTAGE - The high thermal conductivity of graphene material can quickly transmit the waste heat generated in the active area to the heat sink, reduces the thermal gradient of the chip, greatly enhances the radiating effect of the packaging module, compared with the traditional method for packaging gallium arsenide-based large power laser reliability, stability and radiating effects is obviously enhanced, at the same time, improves the service life of the laser. The structure of the method is a chip-graphene film-solder layer-base heat sink so that the CTE of chip and heat sink is not directly, contact the stress generated by active area of chip, which avoids the packaging wavelength caused by heat dissipation and stress red shift, output power is reduced, photoelectric conversion efficiency, threshold current is increased to cause reliability reduction and so on. DESCRIPTION OF DRAWING(S) - The drawing shows a chip structure after adhering graphene in the gallium arsenide-based high power chip laser method for improving radiating efficiency.