▎ 摘　　要

NOVELTY - The detector has a Schottky structure which is set on the polished surface of beta-gallium oxide single wafer (2). The single wafer is in ohmic contact with the chromium/gold electrode (4). The polished surface of wafer is in Schottky contact with the graphene thin film (3). The chromium/gold electrode surface is uniformly coated with silver paste (5). The gallium oxide single wafer and the substrate (1) are connected through the silver paste. One side of the graphene thin film is in ohmic contact with the leading-out electrode (6). USE - Schottky junction deep UV photoelectric detector. ADVANTAGE - The beta sensitivity of gallium oxide deep UV light is utilized, so that high light transmittance excellent characteristics and deep UV light with strong absorption of detector are achieved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of deep UV photoelectric detector. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the deep UV Photoelectric detector. Substrate (1) Single wafer (2) Graphene thin film (3) Chromium/gold electrode (4) Silver paste (5) Leading-out electrode (6)